Bias-voltage-controlled magnetization switch in ferromagnetic semiconductor resonant tunneling diodes

Ferromagnetic Resonant Tunneling Diodes: Physics and Applications

Dedication To my family. v Acknowledgements I would like to acknowledge, foremost, my advisor Prof. Sanjay Banerjee. I should thank him for providing me the opportunity to pursue graduate study, his constant support for the last six years – both intellectual and material, and the flexibility he afforded to me to define and follow my interests. Second, I would like to acknowledge my co-advisor P...

Theory of digital magnetoresistance in ferromagnetic resonant-tunneling diodes

We propose a ferromagnetic spintronic system, which consists of two serial connected resonant-tunneling diodes. One diode is nonmagnetic whereas the other comprises a ferromagnetic emitter and quantum well. Using a self-consistent coherent transport model we show that the current-voltage characteristic of the ferromagnetic diode can be strongly modulated by changing the relative orientation of ...

Multi-GHz MVL Circuits Using Compound-Semiconductor Resonant-Tunneling Diodes

Compound semiconductor devices are commonly used in today’s wideband communications systems. In particular, they are indispensable to build the front-end stage, which is required to process high-frequency signals. Introduction of resonant-tunneling diodes (RTDs) to the front end would result in even better system performance. In the long term, such efforts are expected to pave the way for post-...

THz resonant-tunneling diodes

Resonant Magnetization Tunneling in Molecular Magnets

The frontier between the classical and quantum worlds can be approached in one of two ways: from the top down or the bottom up. The top-down approach entails starting with an essentially classical variable (e.g. the flux in a superconducting loop, the charge on a small superconducting island or the magnetization of a single-domain magnetic particle) and squeezing down the size of the system (th...